SSD/IBT GROUP MEMBERS AND THEIR RESEARCH INTERESTS
- I V Bradley (III-V device technology, Optoelectronics)
- I Chakarov (Computer simulation)
- N G Emerson (Group VI device technology)
- A Fard (Group IV device technology)
- M Finney (Silicides)
- R M Geatches (Non-destructive optical characterization)
- L F Giles (Group IV device technology)
- W P Gillin (Central facility, III-V device technology)
- R M Gwilliam (Central facility, III-V device technology, Silicides)
- A Hammiche (Scanning tunnelling microscopy)
- M Harry (Silicides)
- N A Hatzopoulos (Group IV device technology)
- P L F Hemment (Group IV device technology)
- K P Homewood (III-V device technology, optoelectronic devices)
- P Hughes (Optoelectronics)
- T D Hunt (Silicides)
- Z H Jafri (Central facility)
- A James (Group IV device technology)
- C Jeynes (Central facility)
- A Kazor (Plasma immersion)
- J P Kelly (Group IV device technology)
- M J Kelly (III-V device technology)
- T Komoda (Group IV device technology)
- D Kyle (Optoelectronics)
- D Leong (III-V device technology)
- M A Lourenco (III-V device technology, Optoelectronics)
- J Micallef (Optoelectronics)
- A Nejim (Group IV device technology)
- M J Parham (Optoelectronics)
- G T Reed (Optoelectronic devices, Sensors)
- K J Reeson (Silicides, Non-destructive optical characterization)
- A Rickman (Optoelectronics, Sensors)
- A K Robinson (Central facility)
- B J Sealy (Central facility, III-V device technology, Silicides)
- R S Spraggs (Silicides)
- K G Stephens (Central facility, Ion sources, MeV technology)
- S Sugiarto (Group IV device technology)
- C K Tang (Optoelectronics)
- A S Way (Sensors)
- R P Webb (Central facility, Computer simulation)
- B L Weiss (Optoelectronic devices)
- R J Wilson (Central facility, MeV implantation)
- Z Yang (Optoelectronics)
- J P Zhang (Group IV device technology)
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7th March 1994